That is true for all transistor amplifiers, regardless of biasing method.
“Due to the negative feedback loop created between the emitter and the collector . . .” — and — “A negative feedback effect is produced by the voltage drop across the collector-base junction . . .”
The collector pin and CB PN junction are not part of the negative feedback mechanism for an emitter biased transistor. What is really happening to produce the negative feedback?
“Base bias, on the other hand, is less stable than emitter bias since it is dependent on a single forward-biased junction.”
Only the BE PN junction is forward biased in all transistor amplifiers. What is the real reason that base biased transistors are affected more by changes in beta than emitter biased transistors? I think you misunderstood what Boylestad and Nashelsky wrote.
“the Q-point shift caused by temperature is more pronounced in base bias topologies because there is only one forward-biased junction in the base bias configuration, which makes it more sensitive to temperature fluctuations,”
All transistor amplifiers have only one forward-biased PN junction — the base-emitter junction. The collector-base junction is always reverse biased. This does not affect stability. What is really happening?
“Emitter-feedback bias has the additional benefit of doing away with the separate biasing resistor that base bias systems frequently ask for.”
Base bias circuits always have a base resistor, but no emitter resistor.
Emitter bias circuits usually have an emitter resistor, but no base resistor. The number of components is the same, so a lower component count is not an “improvement”. What is?
